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BC856S ... BC859S
BC856S ... BC859S PNP
Surface Mount General Purpose Si-Epi-Planar Double-Transistors Si-Epi-Planar Universal-Doppeltransistoren fur die Oberflachenmontage Power dissipation Verlustleistung
1.250.1
PNP
300 mW SOT-363 0.01 g
Version 2006-08-01
2
6
0.1
2 x 0.65 5 4
0.90.1
2.1
Type Code
1 2 3
0.1
Plastic case Kunststoffgehause Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
2.4
Dimensions - Mae [mm] 6 = C1 5 = B2 4 = E2 1 = E1 2 = B1 3 = C2
Maximum ratings (TA = 25C) per transistor - pro Transistor Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open Collector-Base-voltage - Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Peak Emitter current - Emitter-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur E open C open - VCBO - VCEO - VEB0 Ptot - IC - ICM - IBM IEM Tj TS
Grenzwerte (TA = 25C) BC856S 65 V 80 V BC857S 45 V 50 V 5V 300 mW 1) 100 mA 200 mA 200 mA 200 mA -55...+150C -55...+150C BC858S BC859S 30 V 30 V
Characteristics (Tj = 25C) per transistor - pro Transistor DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 5 V, - IC = 10 A - VCE = 5 V, - IC = 2 mA h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz Small signal current gain - Kleinsignal-Stromverstarkung Input impedance - Eingangs-Impedanz Output admittance - Ausgangs-Leitwert Reverser voltage transfer ratio - Spannungsruckwirkung hfe hie hoe hre - 1.6 k 18 S - hFE hFE - 110 Min.
Kennwerte (Tj = 25C) Typ. 90 ... 270 - 220 ... 600 - - 1.5 ... 3*10-4 Max. - 800 - 15 k 110 S -
1
Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/
(c) Diotec Semiconductor AG
1
BC856S ... BC859S Characteristics (Tj = 25C) per transistor - pro Transistor Collector-Emitter saturation voltage - Kollektor-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter saturation voltage - Basis-Sattigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA Base-Emitter-voltage - Basis-Emitter-Spannung 2) - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA Collector-Base cutoff current - Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 125C, (E open) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 10 V, IE =ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren Pinning - Anschlussbelegung T1: E1 = 1, C1 = 6, B1 = 2 T2: E2 = 4, C2 = 3, B2 = 5
1
T1
Kennwerte (Tj = 25C) Min. - VCEsat - VCEsat - VBEsat - VBEsat - VBE - VBE - ICB0 - ICB0 - IEB0 fT CCBO CEB0 RthA - - - - 600 mV - - - - 100 MHz - - Typ. 90 mV 200 mV 700 mV 900 mV 650 mV - - - - - - 10 pF < 420 K/W 1) BC846S ... BC849S
6 5 4
T2
Max. 250 mV 600 mV - - 750 mV 820 mV 15 nA 5 A 100 nA - 6 pF -
2
3
2 1
Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschluss http://www.diotec.com/ (c) Diotec Semiconductor AG
2

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